Datenblatt-pdf.com


CEP50N10 Schematic ( PDF Datasheet ) - CET

Teilenummer CEP50N10
Beschreibung N-Channel Enhancement Mode Field Effect Transistor
Hersteller CET
Logo CET Logo 




Gesamt 4 Seiten
CEP50N10 Datasheet, Funktion
CEP50N10/CEB50N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 50A, RDS(ON) = 30m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±25
Drain Current-Continuous
Drain Current-Pulsed a
ID 50
IDM 200
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
136
0.91
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
397
43.5
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.1
62.5
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Aug
http://www.cet-mos.com





SeitenGesamt 4 Seiten
PDF Download[ CEP50N10 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
CEP50N10N-Channel Enhancement Mode Field Effect TransistorCET
CET

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche