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Teilenummer | CEP85N75 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP85N75/CEB85N75
CEF85N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP85N75
CEB85N75
CEF85N75
VDSS
75V
75V
75V
RDS(ON)
12mΩ
12mΩ
12mΩ
ID
86A
86A
86A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
D
G
D
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263 TO-220F
VDS 75
VGS ±30
ID 86 86e
IDM f
344 344e
200 75
PD 1.33 0.5
EAS
IAS
TJ,Tstg
880 880
45 45
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Sep.
http://www.cet-mos.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEP85N75 Schematic.PDF ] |
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