(PDF) CEB73A3G Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEB73A3G
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 62 248 75 0.52 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2009.June http://www.cet-mos.com 1 page

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PDF CEB73A3G Data sheet ( Hoja de datos )