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RF1S9530SM Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer RF1S9530SM
Beschreibung P-Channel Power MOSFETs
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
RF1S9530SM Datasheet, Funktion
Data Sheet
IRF9530, RF1S9530SM
January 2002
12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate power
field effect transistors. They are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. The high input impedance allows these
types to be operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9530
TO-220AB
IRF9530
RF1S9530SM
TO-263AB
RF1S9530
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
Features
• 12A, 100V
• rDS(ON) = 0.300
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263A
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF9530, RF1S9530SM Rev. B






RF1S9530SM Datasheet, Funktion
Test Circuits and Waveforms
IRF9530, RF1S9530SM
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
L
DUT
-
VDD
+
IAS
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
RL
VGS
DUT
RG
-
VDD
+
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
-VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
DUT
D
G DUT
0
IG(REF)
S
+VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
0
VDS
Qgs
VDD
0
Qgd
Qg(TOT)
VGS
IG(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
IRF9530, RF1S9530SM Rev. B

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