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FDMS0308CS Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDMS0308CS
Beschreibung N-Channel PowerTrench SyncFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
FDMS0308CS Datasheet, Funktion
August 2010
FDMS0308CS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 3 m:
Features
General Description
„ Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A
„ Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS0308CS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Desktop
Top Bottom
Pin 1
S D5
S
S
G
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
113
22
150
98
65
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
 (Note 1a)
1.9
50
°C/W
Device Marking
FDMS0308CS
Device
FDMS0308CS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS0308CS Rev.C
1
www.fairchildsemi.com






FDMS0308CS Datasheet, Funktion
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0308CS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
25
20
15
di/dt = 300 A/Ps
10
5
0
-5
0 30 60 90 120 150
TIME (ns)
Figure 14. FDMS0308CS SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3 TJ = 100 oC
10-4
10-5
TJ = 25 oC
10-6
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
FDMS0308CS Rev.C
6 www.fairchildsemi.com

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