Datenblatt-pdf.com

FQA7N80C_F109 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FQA7N80C_F109
Beschreibung N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
FQA7N80C_F109 Datasheet, Funktion
FQA7N80C_F109
N-Channel QFET® MOSFET
800 V, 7 A, 1.9 Ω
Features
• 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 A
• Low Gate Charge (Typ. 27nC)
• Low Crss (Typ. 10pF)
• 100% Avalanche Tested
• RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA7N80C_F109
800
7.0
4.4
28.0
± 30
580
7.0
30
4.0
198
1.75
-55 to +150
300
FQA7N80C_F109
0.63
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
1
www.fairchildsemi.com






FQA7N80C_F109 Datasheet, Funktion
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
6
www.fairchildsemi.com

6 Page







SeitenGesamt 8 Seiten
PDF Download[ FQA7N80C_F109 Schematic.PDF ]


Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FQA7N80C_F109N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2020   |  Kontakt  |   Suche