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Teilenummer | WNM2306 |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 6 Seiten WNM2306
N-Channel, 20V, 3.2A, Power MOSFET
WNM2306
Http://www.willsemi.com
V(BR)DSS
20
Rds(on)
(Max. m)
45 @ 4.5V
55 @ 2.5V
66 @ 1.8V
Descriptions
The WNM2306 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM2306 is Pb-free.
Features
SOT-23
D
3
12
GS
Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WT6*
WT6
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
Order Information
Device
Package
WNM2306-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec,2011 - Rev.2.3
Package Outline Dimension
SOT-23
WNM2306
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
ș
Will Semiconductor Ltd.
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0o
Dimensions In Millimeters
0.950 (Typ.)
0.550 (Typ.)
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8o
6 Dec,2011 - Rev.2.3
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WNM2306 Schematic.PDF ] |
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