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PDF P5506BDG Data sheet ( Hoja de datos )
| Número de pieza | P5506BDG | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko | |
| Logotipo |  |
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NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 55mΩ
ID
22A
D
G
1.GATE
2.DRAIN
3.SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
LIMITS
60
±20
22
18
80
50
32
-55 to 150
275
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
2.5 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
55 °C / W
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State Resistance1
ID(ON)
RDS(ON)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 8A
VGS = 10V, ID = 10A
60
1 1.5 2.5
V
±250 nA
1
µA
10
22 A
59 75
mΩ
42 55
REV 1.0
1 Aug-24-2009
1 page  
NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
REV 1.0
5 Aug-24-2009
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P5506BDG.PDF ] | |
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