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What is RBR5L60A?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Schottky Barrier Diode".


RBR5L60A Datasheet PDF - ROHM Semiconductor

Part Number RBR5L60A
Description Schottky Barrier Diode
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Schottky Barrier Diode
RBR5L60A
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Low VF
12
1.5±0.2
0.1±0.02
2.0±0.2
PMDS
lStructure
Cathode
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
fφ 1.55±0.05
Anode
0.3
2.9±0.1
4.0±0.1
fφ 1.55
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
60 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=30ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
60
5
50
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=5.0A
VR=60V
Min. Typ. Max. Unit
- - 0.55 V
- - 250 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.A

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RBR5L60A equivalent
RBR5L60A
lElectrical Characteristic Curves
Data Sheet
1000
100
Rth(j-a)
Rth(j-c)
10
Glass epoxy board mounted
IM=100mA
IF=4A
1
time
0.1
0.001 0.01 0.1
1ms300ms
1 10 100
TIME : t (s)
Rth-t CHARACTERISTICS
1000
15
Glass epoxy board mounted
IO
0A
0V
10
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
DC
5 Sin(θ=180)
D = 1/2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
Glass epoxy board mounted
15 IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
10 Tj=150°C
DC
Sin(θ=180)
5 D = 1/2
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
30
25
20
15
10 Ave. : 6.4kV
Ave. : 3.0kV
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.04 - Rev.A


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Featured Datasheets

Part NumberDescriptionMFRS
RBR5L60AThe function is Schottky Barrier Diode. ROHM SemiconductorROHM Semiconductor

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