|
|
PDF DMA56109 Data sheet ( Hoja de datos )
| Número de pieza | DMA56109 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DMA56109 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
DMA56109
Silicon PNP epitaxial planar type
For digital circuits
DMA26109 in SMini5 type package
Unit: mm
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: P1
Basic Part Number
Dual DRA2113Z (Common emitter)
Packaging
DMA561090R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-F3-B
SC-113CB
SOT-353
Collector-base voltage (Emitter open)
Tr1
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Overall
Operating ambient temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Topr
Tstg
–50
–50
–100
150
150
–40 to +85
–55 to +150
V
V
mA
mW
°C
°C
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
(C1) (C2)
54
Tr1
R2
R1
Tr2
R2
R1
123
(B1) (E) (B2)
Resistance value R1 1
R2 10
kΩ
kΩ
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = –10 µA, IE = 0
–50
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–50
Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0
– 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0
– 0.5
Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0
–1.5
Forward current transfer ratio
hFE VCE = –10 V, IC = –5 mA
30
hFE ratio *1
hFE
(Small/Large)
VCE = –10 V, IC = –5 mA
0.50 0.99
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = – 0.5 mA
– 0.25
Input voltage (ON)
VI(on) VCE = – 0.2 V, IC = –5 mA
–1.0
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
– 0.4
Input resistance
R1
–30% 1 +30%
Resistance ratio
R1 / R2
0.08 0.10 0.12
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
V
V
µA
µA
mA
V
V
V
kΩ
Publication date: September 2013
Ver. DED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DMA56109.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DMA56109 | Silicon PNP Epitaxial Transistor | Panasonic |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |