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PDF RJK2555DPA Data sheet ( Hoja de datos )
| Número de pieza | RJK2555DPA | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK2555DPA
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1776-0200
Rev.2.00
Apr 09, 2009
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
17
34
17
34
7
3.0
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1776-0200 Rev.2.00 Apr 09, 2009
Page 1 of 6
1 page  
RJK2555DPA
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.01
0.02
0.011shot
pulse
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 125 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1776-0200 Rev.2.00 Apr 09, 2009
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK2555DPA.PDF ] | |
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