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RJK0853DPB Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK0853DPB
Beschreibung Silicon N Channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK0853DPB Datasheet, Funktion
RJK0853DPB
80V, 40A, 8.0mmax.
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0081EJ0300
Rev.3.00
Apr 09, 2013
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 6.2 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4 1, 2, 3 Source
G 4 Gate
5 Drain
SSS
123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
80
20
40
160
40
20
53.3
65
1.92
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive (10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0081EJ0300 Rev.3.00
Apr 09, 2013
Page 1 of 6






RJK0853DPB Datasheet, Funktion
RJK0853DPB
Package Dimensions
Package Name
LFPAK
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Previous Code
LFPAKV
MASS[Typ.]
0.080g
4.9
5.3 Max
4.0 ± 0.2
5
0.25 +0.05
0.03
3.3
Preliminary
Unit: mm
1
1.27
4
0.20 +0.05
0.03
0.75 Max
0.10
0.40 ± 0.06 0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part No.
RJK0853DPB-00-J5
Quantity
2500 pcs
Taping
Shipping Container
R07DS0081EJ0300 Rev.3.00
Apr 09, 2013
Page 6 of 6

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