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Número de pieza | IRL8113S | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL8113S (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95821
IRL8113
IRL8113S
IRL8113L
HEXFET® Power MOSFET
VDSS RDS(on) max Qg (Typ.)
30V 6.0m:
23nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL8113
D2Pak
IRL8113S
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
30
± 20
105 h
74 h
420
110
57
0.76
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
TO-262
IRL8113L
Units
V
A
W
W/°C
°C
Units
°C/W
1
1/6/04
1 page IRL8113/S/L
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.430 0.000266
τ3τ3 0.397 0.000685
0.493 0.007393
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRL8113/S/L
IGBT
1- GATE
2- COLLEC-
TOR
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
INT ERNAT IONAL
RE CT IF IE R
LOGO
AS SEMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRL8113S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL8113 | Power MOSFET ( Transistor ) | International Rectifier |
IRL8113L | Power MOSFET ( Transistor ) | International Rectifier |
IRL8113LPbF | Power MOSFET ( Transistor ) | International Rectifier |
IRL8113PbF | Power MOSFET ( Transistor ) | International Rectifier |
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