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RJK0215DPA Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK0215DPA
Beschreibung Silicon N Channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 11 Seiten
RJK0215DPA Datasheet, Funktion
Preliminary Datasheet
RJK0215DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0207EJ0110
Rev.1.10
Sep 05, 2011
Applications
DC-DC conversion for PC and Server.
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A
(Package name: WPAK-D(2))
5 678
1
G1
234
D1 D1 D1
8
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc=25C
MOS1
25
±20
15
60
15
5
3.1
10
150
–55 to +150
Ratings
MOS2
25
±20
40
160
40
14
24.5
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0207EJ0110 Rev.1.10
Sep 05, 2011
Page 1 of 10






RJK0215DPA Datasheet, Funktion
RJK0215DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Vin
15 V
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03 0.02
0.01
0.01
10 μ
100 μ
θch c(t) = γs (t) • θch c
θch c = 12.5°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L IAP2
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0207EJ0110 Rev.1.10
Sep 05, 2011
Page 6 of 10

6 Page







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