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N0413N Schematic ( PDF Datasheet ) - Renesas

Teilenummer N0413N
Beschreibung N-CHANNEL MOSFET FOR SWITCHING
Hersteller Renesas
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Gesamt 8 Seiten
N0413N Datasheet, Funktion
N0413N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0555EJ0100
Rev.1.00
Nov 07, 2011
Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)
Low input capacitance
Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
High current
ID(DC) = ±100 A
RoHS Compliant
Ordering Information
Part No.
N0413N-ZK-E1-AY 1
Lead Plating
Pure Sn (Tin)
Tape
Packing
N0413N-ZK-E2-AY 1
800 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263
1.39 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
40
±20
±100
±400
119
1.5
150
55 to +150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
1.05
83.3
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 0 V, L = 100 μH
R07DS0555EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6






N0413N Datasheet, Funktion
N0413N
Package Drawing (Unit: mm)
TO-263
10.0±0.3
7.8 MIN.
4
1.27±0.2
2.54 0.8±0.1
1 23
4.8 MAX.
1.3±0.2
0 to 0.25
2.4±0.2
0.5±0.2
0.254
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Chapter Title
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0555EJ0100 Rev.1.00
Nov 07, 2011
Page 6 of 6

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