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Número de pieza | AP88L02P | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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No Preview Available ! Advanced Power
Electronics Corp.
AP88L02S/P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
Description
G
D
S
BVDSS
RDS(ON)
ID
25V
5mΩ
88A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP88L02P) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G D S TO-263(S)
G
D
S
Rating
25
± 20
88
55
321
96
0.77
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218032
1 page AP88L02S/P
16
14 I D =40A
V DS =20V
12
10
8
6
4
2
0
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
120
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
Ciss
1000
Coss
Crss
100
1 6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100 3
10
T j =150 o C
1
T j =25 o C
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP88L02P.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP88L02P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP88L02S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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