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PDF RJK0854DPB Data sheet ( Hoja de datos )
| Número de pieza | RJK0854DPB | |
| Descripción | Silicon N Channel Power MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK0854DPB
80V, 25A, 13 m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 10 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
Preliminary Datasheet
R07DS1055EJ0200
(Previous: REJ03G1883-0100)
Rev.2.00
Apr 11, 2013
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings
80
20
25
100
25
25
8.3
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1055EJ0200 Rev.2.00
Apr 11, 2013
Page 1 of 6
1 page  
RJK0854DPB
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.27°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAS =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr td(off)
tf
R07DS1055EJ0200 Rev.2.00
Apr 11, 2013
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK0854DPB.PDF ] | |
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