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Teilenummer | RJK0226DNS |
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Beschreibung | Silicon N Channel Power MOS FET | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 7 Seiten Preliminary Datasheet
RJK0226DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0260EJ0110
Rev.1.10
Mar 03, 2011
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.3 m typ. (at VGS = 8 V)
Pb-free
Halogen-free
Outline
Package name: 8pin HVSON(3333)
5 6 78
4 321
4
G
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
25
±12
40
160
40
14.7
27
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 1 of 6
RJK0226DNS
Package Dimensions
Preliminary
Ordering Information
Orderable Part Number
Quantity
RJK0226DNS-00-J5
3000 pcs
Shipping Container
Taping
Package
8pin HVSON(3333)
0.028g TYP
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK0226DNS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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