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PDF RJJ0315DPA Data sheet ( Hoja de datos )
| Número de pieza | RJJ0315DPA | |
| Descripción | P Channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJJ0315DPA
-30V, -35A, 5.9mΩmax.
P Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
5 678
D DDD
Datasheet
R07DS0388EJ0400
Rev.4.00
Mar 22, 2013
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10s, duty cycle 1 %
2. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Tch
Tstg
Ratings
–30
-20/+10
–35
–140
–35
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0388EJ0400 Rev.4.00
Mar 22, 2013
Page 1 of 6
1 page  
RJJ0315DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 μ
100 μ
θch − c(t) = γs (t) • θch − c
θch − c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
-10 V
VDS
= -10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
R07DS0388EJ0400 Rev.4.00
Mar 22, 2013
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJJ0315DPA.PDF ] | |
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