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80N055 Schematic ( PDF Datasheet ) - NEC

Teilenummer 80N055
Beschreibung NP80N055
Hersteller NEC
Logo NEC Logo 




Gesamt 8 Seiten
80N055 Datasheet, Funktion
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
www.DataSheet4UT.rcaonmsistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 mMAX. (VGS = 5 V, ID = 40 A)
Low Ciss : Ciss = 2900 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
NP80N055CLE
NP80N055DLE
NP80N055ELE
PACKAGE
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
Drain Current (DC) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±80
±200
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note3
Single Avalanche Energy Note3
PT
IAS
EAS
120
45 / 30 / 10
2.0 / 90 / 100
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW 10 µs, Duty cycle 1 %
3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25 °C/W
Channel to Ambient
Rth(ch-A)
83.3 °C/W
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14097EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000






80N055 Datasheet, Funktion
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
NP80N055CLE, NP80N055DLE, NP80N055ELE
2) TO-262 (MP-25 Fin Cut)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
www.DataSheet4U.com 1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4.8 MAX.
(10) 1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZJ)
(10.0)
4
4.8 MAX.
1.3±0.2
1.4±0.2
0.7±0.2
(0.5R()0.8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6 Data Sheet D14097EJ3V0DS

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