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PDF C2712 Data sheet ( Hoja de datos )
| Número de pieza | C2712 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR
OF FM/VHF TUNER
High Current Gain Bandwidth
Product fT=600MHz
2SC2715
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
30
15
5
50
225
150
-55~150
(Ta=25 oC)
Unit
V
V
V
mA
mW
OC
OC
Electrical Characteristics
(Ta=25 oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
Collector-Gain-Bandwidth Product
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
Cob
fT
30
15
5
28 100
1.3
700 1100
50
50
300
0.5
1.7
V
V
V
nA
nA
V
PF
MHz
IC=100 A IE=0
IC=1mA IB=0
IE=100 A IC=0
VCB=12V, VE=0
VCB=3V, IC=0
VCB=5V, IC=1mA
IC=10mA, IB=1mA
VCB=10V, IE=10,f=1MHz
VCE=5V, IC=5mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SC2715=J8
1 page | ||
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| PDF Descargar | [ Datasheet C2712.PDF ] | |
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