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AP1662 Schematic ( PDF Datasheet ) - BCD

Teilenummer AP1662
Beschreibung HIGH PERFORMANCE POWER FACTOR CORRECTOR
Hersteller BCD
Logo BCD Logo 




Gesamt 18 Seiten
AP1662 Datasheet, Funktion
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
General Description
The AP1662 is an active power factor control IC
which is designed mainly for use as a pre-converter
in electronic ballast, AC-DC adapter and off-line
SMPS applications.
.
The IC includes an internal start-up timer for
stand-alone applications, a one-quadrant multiplier to
realize near unity power factor and a zero current
detector to ensure DCM boundary conduction
operation.
The totem pole output stage is capable of driving
power MOSFET with 600mA source current and
800mA sink current.
Designed with advanced BiCMOS process, the
AP1662 features low start-up current, low operation
current and low power dissipation. The AP1662 also
has rich protection features including over-voltage
protection, input under-voltage lockout with
hysteresis and multiplier output clamp to limit
maximum peak current.
The AP1662 meets IEC61000-3-2 standard even at
one-quadrant load and THD lower than 10% at
high-end line voltage and full load.
The IC is available in SOIC-8 and DIP-8 packages.
Features
Comply with IEC61000-3-2 Standard
• Proprietary Design for Minimum THD
• Zero Current Detection Control for DCM
Boundary Conduction Mode
• Adjustable Output Voltage with Precise
Over-voltage Protection
• Low Start-up Current with 40µA Typical Value
• Low Quiescent Current with 2.5mA Typical
Value
• 1% Precision Internal Reference Voltage @
TJ=25°C
• Internal Start-up Timer
• Disable Function for Reduced Current
Consumption
• Totem Pole Output with 600mA Source and
800mA Sink Current Capability
• Under-voltage Lockout with 2.5V Hysteresis
Applications
Electronic Ballast
• AC-DC Adapter
• Off-line SMPS
• Single Stage PFC LED Driver
SOIC-8
DIP-8
Jul. 2012 Rev. 1. 3
Figure 1. Package Types of AP1662
BCD Semiconductor Manufacturing Limited
1






AP1662 Datasheet, Funktion
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Electrical Characteristics
VCC =12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified.
Parameter
Symbol
Test Conditions
Under Voltage Lockout Section
Turn-on Threshold
VCC-ON VCC Rising
Turn-off Threshold
VCC-OFF VCC Falling
Hysteresis
VCC-HYS
Min Typ Max Unit
11 12 13
8.7 9.5 10.3
2.2 2.5 2.8
V
V
V
VCC Operating Range
VCC After turn-on
10.3 22 V
Zener Voltage
VZ ICC=20mA
Total Supply Current Section
Start-up Current
ISTART-UP
Operating Supply Current
ICC
Quiescent Current
IQ
Quiescent Current
IQ
VCC=11V before turn-on
Frequency=70kHz
In OVP condition
VINV =2.7V
After turn on
VZCD150mV, VCC>VCC-OFF
VZCD150mV, VCC<VCC-OFF
Error Amplifier Section
Voltage Feedback Input
Threshold
VINV
Line Regulation
Input Bias Current
Voltage Gain
Gain Bandwidth
Output
Voltage
Output
Current
Upper Clamp
Voltage
Lower Clamp
Voltage
Source
Current
Sink Current
IINV
GV
GB
VCOMP-H
VCOMP-L
ICOMP-H
ICOMP-L
TJ =25ºC
10.3V<VCC<20V
VCC=10.3V to 20V
VINV=0 to 3V
Open Loop
ISOURCE=0.5mA
ISINK=0.5mA
VCOMP=4V, VINV =2.4V
VCOMP=4V, VINV=2.6V
22 24
V
40 70 µA
3.5 5
mA
1.4 2.2
2.5 3.75 mA
2.2 mA
20 50 90 µA
2.465 2.5 2.535
2.44 2.56
V
2 5 mV
-0.1 -1 µA
60 80
dB
1 MHz
5.15 5.55 5.85
2.1 2.25 2.4
V
-2 -4 -8
mA
2.5 4.5
Jul. 2012 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6

6 Page









AP1662 pdf, datenblatt
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics (Continued)
200
190
180
170
160
150
140
130
120
-50
V =12V
CC
0 50 100
Junction Temperature (oC)
150
Figure 16. Start-up Timer vs. TJ
1.8 V =5.0
COMP
1.6
V =4.5
COMP
1.4
V =MAX
COMP
V =4.0
COMP
V =3.5
COMP
1.2
V =3.2
COMP
1.0
0.8 V =3.0
COMP
0.6
0.4 V =2.8
COMP
0.2
V =2.6
COMP
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V (V)
MULT
Figure 17. Multiplier Characteristics
6
5
T =25oC
J
4
V =11V
CC
SINK
3
2
1
V (V)
GD
V -2.0
CC
V -2.5
CC
V -3.0
CC
V -3.5
CC
V -4.0
CC
T =25oC
J
V =11V
CC
SOURCE
0
0 200 400 600 800 1000
I (mA)
GD
0 100 200 300 400 500 600 700
I (mA)
GD
Figure 18. Gate-driver Output Low Saturation
Figure 19. Gate-driver Output High Saturation
Jul. 2012 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
12

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