P-Channel 150 V (D-S) MOSFET
Si7317DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 150
RDS(on) () Max.
1.2 at VGS = - 10 V
1.3 at VGS = - 6 V
ID (A)f
- 2.8
- 2.7
Qg (Typ.)
6.5 nC
PowerPAK 1212-8
FEATURES
• TrenchFET® Power MOSFETs
• PowerPAK® Package
- Low Thermal Resistance
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
3.3 mm
S
1S
3.3 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
Si7317DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Active Clamp circiuts in DC/DC
Power Supplies
• Load Switch
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS - 150
VGS
± 30
V
TC = 25 °C
- 2.8
Continuous Drain Current (TJ = 150 °C)a,b
TC = 70 °C
TA = 25 °C
ID
- 2.2
- 1.1a,b
Pulsed Drain Current (t = 100 µs)
TA = 70 °C
IDM
- 0.9a,b
-2
A
Continuous Source-Drain Diode Currenta,b
TC = 25 °C
TA = 25 °C
IS
- 8e
- 2.7a,b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L 0.1 mH
IAS
EAS
4
0.8
mJ
TC = 25 °C
19.8
Maximum Power Dissipationa,b
TC = 70 °C
TA = 25 °C
PD
12.7
3.2a,b
W
TA = 70 °C
2.1a,b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c,d
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on TC = 25 °C.
Document Number: 62892
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1817-Rev. A, 12-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7317DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?62892.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62892
6 S13-1817-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
