Data Sheet
μPA2735GR
P-channel MOSFET
–30 V, –16 A, 5.0 mΩ
R07DS0867EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free
Power SOP8
Ordering Information
Part No.
μ PA2735GR-E1-AT
μ PA2735GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m16
m150
1.1
2.5
150
−55 to +150
16
25.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6
μPA2735GR
Package Drawings (Unit: mm)
Power SOP8
8
5
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
Equivalent Circuit
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 6 of 6
