Datenblatt-pdf.com

UPA2735GR Schematic ( Datenblatt PDF ) - Renesas

Teilenummer UPA2735GR
Beschreibung P-channel MOSFET
Hersteller Renesas
Logo Renesas Logo 

Gesamt 8 Seiten
		
UPA2735GR Datasheet, Funktion
Data Sheet
μPA2735GR
P-channel MOSFET
–30 V, –16 A, 5.0 mΩ
R07DS0867EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 16 A)
4.5 V Gate-drive available
Small and surface mount package (Power SOP8)
Pb-free and Halogen free
Power SOP8
Ordering Information
Part No.
μ PA2735GR-E1-AT
μ PA2735GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
30
m20
m16
m150
1.1
2.5
150
55 to +150
16
25.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6






UPA2735GR Datasheet, Funktion
μPA2735GR
Package Drawings (Unit: mm)
Power SOP8
8
5
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
Equivalent Circuit
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 6 of 6

6 Page


SeitenGesamt 8 Seiten
PDF Download[ UPA2735GR.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
UPA2735GRP-channel MOSFETRenesas
Renesas

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2019   |  Kontakt  |   Suche