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RJK03P7DPA Schematic ( Datenblatt PDF ) - Renesas Technology

Teilenummer RJK03P7DPA
Beschreibung Built in SBD Dual N-channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 

Gesamt 11 Seiten
		
RJK03P7DPA Datasheet, Funktion
Preliminary Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.4 mmax.
MOS2 30 V, 30 A, 5.3 mmax.
Built in SBD Dual N-channel Power MOS FET
High Speed Power Switching
R07DS0906EJ0110
Rev.1.10
Nov 01, 2012
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B
(Package name: WPAK-D(3))
5 678
1
G1
234
D1 D1 D1
8
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc=25C
MOS1
30
±20
15
60
15
8.5
7.23
10
150
–55 to +150
Ratings
MOS2
30
±20
30
120
30
12
14.4
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 1 of 10






RJK03P7DPA Datasheet, Funktion
RJK03P7DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Vin
15 V
1 D=1
0.5
0.3 0.2
0.1
0.03
0.1
0.05
0.02
01.0sh1ot pulse
0.01
θch – c(t) = γs (t) • θch – c
θch – c = 12.5°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAS =
1
2
L IAP2
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr td(off)
tf
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 6 of 10

6 Page


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