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RJK5002DJE Schematic ( Datenblatt PDF ) - Renesas Technology

Teilenummer RJK5002DJE
Beschreibung High Speed Power Switching MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 

Gesamt 4 Seiten
		
RJK5002DJE Datasheet, Funktion
RJK5002DJE
500V - 2.4A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VDSS
VGSS
ID Note1
ID(pulse) Note3
IDR Note1
IDR(pulse) Note3
Pch Note 2
Channel to ambient thermal Impedance
ch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0844EJ0100
Rev.1.00
Jul 05, 2012
D
1. Source
2. Drain
3. Gate
S
Value
500
30
2.4
4.8
2.4
4.8
0.9
139
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0844EJ0100 Rev.1.00
Jul 05, 2012
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