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CDBM160-HF Schematic ( PDF Datasheet ) - Comchip Technology

Teilenummer CDBM160-HF
Beschreibung SMD Schottky Barrier Rectifiers
Hersteller Comchip Technology
Logo Comchip Technology Logo 




Gesamt 4 Seiten
CDBM160-HF Datasheet, Funktion
SMD Schottky Barrier Rectifiers
CDBM120-HF Thru CDBM1150-HF
Reverse Voltage: 20 to 150 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Tiny plastic SMD package.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mechanical data
-Case: Molded plastic, JEDEC Mini SMA/SOD-123.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.027 gram(approx.).
Mini SMA/SOD-123
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.035(0.90) Typ.
0.122(2.80)
0.096(2.40)
0.067(1.70)
0.051(1.30)
0.035(0.90) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
CDBM CDBM CDBM
120-HF 130-HF 140-HF
CDBM CDBM CDBM CDBM CDBM
150-HF 160-HF 180-HF 1100-HF 1150-HF
Unit
Repetitive peak reverse voltage
VRRM 20 30 40 50 60 80 100 150 V
Maximum RMS voltage
VRMS 14 21 28 35 42 56 70 105 V
Continuous reverse voltage
VR 20 30 40 50 60 80 100 150 V
Maximum forward voltage @IF=1.0A
VF 0.50
0.70 0.85 0.92 V
Forward rectified current
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
O
@TA=25 C
O
@TA=125 C
Typ. thermal resistance, junction to ambient air
IO
IFSM
IR
RθJA
1.0 A
30 A
0.5
10
mA
98
O
C/W
Typ. diode junction capacitance (Note 1)
CJ
120 pF
Operating junction temperature
TJ -55 to +125
-55 to +150
O
C
Storage temperature
TSTG
-65 to +175
O
C
Note 1: f=1MHz and applied 4V DC reverse voltage.
QW-JB002
Comchip Technology CO., LTD.
REV:B
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