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Teilenummer | RJK03M7DPA |
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Beschreibung | Silicon N Channel Power MOS FET | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 7 Seiten RJK03M7DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 8.0 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
Preliminary Datasheet
R07DS0773EJ0110
Rev.1.10
Feb 22, 2012
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
8
6.4
25
5.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0773EJ0110 Rev.1.10
Feb 22, 2012
Page 1 of 6
RJK03M7DPA
Package Dimensions
Package Name
WPAK(3F)
JEITA Package Code
⎯
RENESAS Code
PWSN0008DE-A
Previous Code
WPAK(3F)V
MASS[Typ.]
0.075g
5.1 ± 0.2
0.85Max
Preliminary
4.23Typ
1.27Typ
3.92 ± 0.22
Unit: mm
0.545Typ
1.27Typ
4.90 ± 0.1
0.21Typ
0.42 ± 0.08
Ordering Information
Orderable Part Number
Quantity
RJK03M7DPA-00-J5A
3000 pcs
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
Notice:The reverse pattern of die-pad
support lead described above exists.
Shipping Container
R07DS0773EJ0110 Rev.1.10
Feb 22, 2012
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK03M7DPA Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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