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PDF UPA2465T1Q Data sheet ( Hoja de datos )
| Número de pieza | UPA2465T1Q | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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μ PA2465T1Q
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0190EJ0100
Rev.1.00
Dec 06, 2010
Description
The μ PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
Features
• 2.5 V drive available
• Low on-state resistance
⎯ RDS(on)1 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
⎯ RDS(on)2 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
⎯ RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A)
⎯ RDS(on)4 = 24.5 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
Ordering Information
Part No.
μ PA2465T1Q-E1-AX ∗1
LEAD PLATING
Ni/Pd/Au
PACKING
8 mm embossed taping
Package
8-pin HUSON (2720)
3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
N-CHANNEL
Drain to Source Voltage (VGS = 0 V) VDSS
20
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) ∗1
Drain Current (pulse) ∗2
Total Power Dissipation (2 unit) ∗1
VGSS
ID(DC)
ID(pulse)
PT1
±12
±6.5
±60
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg −55 to +150
Notes: ∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗2. PW ≤ 10 μs, Duty Cycle ≤ 1%
Unit
V
V
A
A
W
°C
°C
R07DS0190EJ0100 Rev.1.00
Dec 06, 2010
Page 1 of 7
1 page  
μ PA2465T1Q
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
40
ID = 3.0 A
35 Pulsed
30
VGS = 4.5 V
4.0 V
25 3.1 V
2.5 V
20
15
10
5
0
-75 -25 25 75 125 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
10
1
VDD = 10 V
VGS = 4 V
RG = 6 Ω
0.1
0.1
td(off)
td(on)
tf
tr
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01 Pulsed
01234
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
1 Ciss
0.1
VGS = 0 V
f = 1 MHz
0.01
0.01 0.1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
18 6
ID = 6.5 A
15 VDD = 16 V
10 V
12 4 V
5
4
93
6
V GS
2
3 VDS 1
00
01234 56789
QG - Gate Charge - nC
R07DS0190EJ0100 Rev.1.00
Dec 06, 2010
Page 5 of 7
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet UPA2465T1Q.PDF ] | |
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