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UPA2461T1Q Schematic ( PDF Datasheet ) - Renesas

Teilenummer UPA2461T1Q
Beschreibung MOS FIELD EFFECT TRANSISTOR
Hersteller Renesas
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Gesamt 9 Seiten
		
UPA2461T1Q Datasheet, Funktion
μ PA2461T1Q
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0186EJ0100
Rev.1.00
Dec 06, 2010
Description
The μ PA2461T1Q is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA2461T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
Features
2.5 V drive available
Low on-state resistance
RDS(on)1 = 21.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A)
RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
Built-in G-S protection diode against ESD
Ordering Information
Part No.
μ PA2461T1Q-E1-AX 1
LEAD PLATING
Ni/Pd/Au
PACKING
8 mm embossed taping
Package
8-pin HUSON (2720)
3000 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
N-CHANNEL
Drain to Source Voltage (VGS = 0 V) VDSS
30
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) 1
Drain Current (pulse) 2
Total Power Dissipation (2 unit) 1
VGSS
ID(DC)
ID(pulse)
PT1
±12
±6.5
±50
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg 55 to +150
Notes: 1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
2. PW 10 μs, Duty Cycle 1%
Unit
V
V
A
A
W
°C
°C
R07DS0186EJ0100 Rev.1.00
Dec 06, 2010
Page 1 of 7






UPA2461T1Q Datasheet, Funktion
μ PA2461T1Q
Package Drawings (Unit: mm)
8-pin HUSON (2720)
2.0±0.1
1.6±0.1
58
Chapter Title
0.05 S
0.5
4
0.25±0.05
1
0.05 M S A B
1, 2, 3: Source1
6, 7, 8: Source2
4: Gate1
5: Gate2
Lead surface metal is Gold.
Hatching area is Cu.
Equivalent Circuit
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0186EJ0100 Rev.1.00
Dec 06, 2010
Page 6 of 7

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