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3DD13003B Schematic ( Datenblatt PDF ) - JIANGSU CHANGJIANG

Teilenummer 3DD13003B
Beschreibung NPN Transistor
Hersteller JIANGSU CHANGJIANG
Logo JIANGSU CHANGJIANG Logo 

Gesamt 2 Seiten
		
3DD13003B Datasheet, Funktion
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13003B TRANSISTOR( NPN )
FEATURES
· power switching applications
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
0.9
150
-55-150
Units
V
V
V
A
W
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
tf
ts
Test conditions
IC= 1mA, IE=0
IC= 10mA, IB=0
IE= 1mA, IC=0
VCB= 700V, IE=0
VCE= 400V, IB=0
VEB= 7V, IC=0
VCE= 10V, IC= 0.4 A
IC=1.5A,IB= 0.5A
IC=0.5A, IB= 0.1A
IC=0.5A, IB=0.1A
VCE=10V,IC=100mA, f =1MHz
IC=1A
IB1=-IB2=0.2A
MIN
700
400
9
20
4
TYP
MAX UNIT
V
V
V
100 µA
50 µA
10 µA
40
3V
0.8 V
1V
MHz
0.7 µs
4 µs
CLASSIFICATION OF hFE
Rank
Range
20-25
25-30
30-35
35-40


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