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PDF DMS3016SFG Data sheet ( Hoja de datos )
| Número de pieza | DMS3016SFG | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes Incorporated | |
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Green DMS3016SFG
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
POWERDI®
Product Summary
V(BR)DSS
30V
RDS(on) max
13mΩ @ VGS = 10V
16mΩ @ VGS = 4.5V
ID
TA = 25°C
10.2A
9.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Features and Benefits
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) – minimize conduction losses
• Low VSD – reducing the losses due to body diode conduction
• Low Qrr – lower Qrr of the integrated Schottky reduces body diode
switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Applications
• DC-DC Converters
• Power management functions
• Analog Switch
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, “Green” Molding Compound.
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
POWERDI3333-8
S Pin 1
S
S
G
Top View
D
D
D
D
Bottom View
8765
Drain
Gate
123 4
Top View
Pin Configuration
Source
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMS3016SFG-7
DMS3016SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
1 page  
DMS3016SFG
2
1.5 ID = 100mA
1
0.5
-50 -25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
1,000
100
CISS
COSS
CRSS
30
25
20 TA = 25°C
15
10
5
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
10,000
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
TA = 25°C
10
0
10
2 4 6 8 10 12 14
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
16
8
6
VDS = 15V
ID = 11.2A
4
1
0 10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMS3016SFG.PDF ] | |
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