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PDF D2220 Data sheet ( Hoja de datos )
| Número de pieza | D2220 | |
| Descripción | NPN Transistor - 2SD2220 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D2220 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
s Features
q Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio hFE
q A shunt resistor is omitted from the driver
q Allowing supply with the radial taping
7.5±0.2
Unit: mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.7±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
100
80
5
1.5
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
123
0.4±0.1
2.05±0.2
1:Emitter
2:Collector
3:Base
MT3 Type Package
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
VBE(sat)
fT
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1A
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
VCB = 10V, IE = –50mA, f = 200MHz
min
100
80
5
4000
typ max Unit
100 nA
100 nA
V
V
V
20000
1.8 V
2.2 V
150 MHz
*hFE Rank classification
Rank
Q
R
hFE 4000 to 10000 8000 to 20000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2220.PDF ] | |
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