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RFUH20NS3SFH Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RFUH20NS3SFH
Beschreibung Super Fast Recovery Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 5 Seiten
RFUH20NS3SFH Datasheet, Funktion
Super Fast Recovery Diode
RFUH20NS3SFH
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
RFUH20
NS3S
ձ
zFeatures
1)Ultra low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
ROHM : LPDS
JEITA : TO263S
ձ Manufacture Date
zTaping Dimensions(Unit : mm)
Data Sheet
AEC-Q101 Qualified
zLand Size Figure(Unit : mm)
LPDS
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
VRM
VR
Io
Forward current surge peak
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Conditions
Duty0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=32°C
60Hz half sin wave , Non-repetitive at Tj=25°C (*1)
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VF
IR
trr
Rth(j-c)
Conditions
IF=20A
VR=350V
IF=0.5A,IR=1A,Irr=0.25×IR
Junction to case
Min.
Limits
Unit
350 V
350 V
20 A
100 A
150 °C
55 to 150
°C
(*1) 1-3pin common circuit
Typ.
1.3
0.05
16
Max.
1.5
10
25
3.0
Unit
V
μA
ns
°C/W
WWWROHMCOM
Ú2/(-#O ,TD!LLRIGHTSRESERVED
1/4
2012.06 - Rev.A





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