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PDF D30N40 Data sheet ( Hoja de datos )
| Número de pieza | D30N40 | |
| Descripción | AOD30N40 | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D30N40 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AOD3N40
400V,2.6A N-Channel MOSFET
General Description
Product Summary
The AOD3N40 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
500V@150℃
2.6A
< 3.1Ω
Top View
TO252
DPAK
Bottom View
D
D
S
G
G
S
D
G
S
AOD3N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM (<80µs)
IDM (<20µs)
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
400
±30
2.6
1.6
5.6
6.5
1.5
34
68
5
50
0.4
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
46
-
2.1
Maximum
55
0.5
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.2.0: May 2013
Page 1 of 6
1 page  
AOD3N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
300 TA=25°C
200
100
0
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100 1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev.2.0: May 2013
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet D30N40.PDF ] | |
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