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Número de pieza | STD5NK52ZD-1 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STD5NK52ZD-1 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! STD5NK52ZD, STB5NK52ZD-1
STF5NK52ZD,STP5NK52ZD
N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
STB5NK52ZD-1
STD5NK52ZD-1
STD5NK52ZD
STF5NK52ZD
STP5NK52ZD
520 V
520 V
520 V
520 V
520 V
RDS(on)
max
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
ID Pw
4.4 A 70 W
4.4 A 70 W
4.4 A 70 W
4.4 A 25 W
4.4 A 70 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
■ Improved ESD capability
Application
■ Switching applications
Description
The SuperFREDMesh™ series associates all
advantages of reduced on-resistance, zener gate
protection and very high dv/dt capability with a
fast body-drain recovery diode. Such series
complements the “FDmesh™” advanced
technology.
Table 1. Device summary
Order codes
Marking
STB5NK52ZD-1
STD5NK52ZD-1
STD5NK52ZD
STF5NK52ZD
STP5NK52ZD
B5NK52ZD
D5NK52ZD
D5NK52ZD
F5NK52ZD
P5NK52ZD
+2#-
&2#-
+2#-
61
61(2
Figure 1. Internal schematic diagram
D(2)
G(1)
Package
I²PAK
IPAK
DPAK
TO-220FP
TO-220
S(3)
AM01476v1
Packaging
Tube
Tube
Tape and reel
Tube
Tube
September 2008
Rev 5
1/17
www.st.com
17
1 page STB5NK52ZD-1, STD/F/P5NK52ZD
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 260 V, ID = 2.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ. Max Unit
11.4 ns
13.6 ns
23.1 ns
15 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.4 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.4 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 23)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
4.4 A
17.6 A
1.6 V
97.7 ns
300 nC
5.9 A
139 ns
500 nC
7.2 A
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
BVGSO(1)
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/17
5 Page STB5NK52ZD-1, STD/F/P5NK52ZD
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/17
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet STD5NK52ZD-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD5NK52ZD-1 | N-Channel Power MOSFET / Transistor | STMicroelectronics |
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