PDF SiHA25N50E Data sheet ( Hoja de datos )

Número de pieza	SiHA25N50E
Descripción	E Series Power MOSFET
Fabricantes	Vishay
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No Preview Available ! www.vishay.com SiHA25N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 86 14 25 Single Thin-Lead TO-220 FULLPAK 0.145 D G G DS S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATONS • Hard switched topologies • Power factor correction power supplies (PFC) • Switch mode power supplies (SMPS) • Computing - PC silver box / ATX power supplies • Lighting - Two stage LED lighting ORDERING INFORMATION Package Lead (Pb)-free Thin-Lead TO-220 FULLPAK SiHA25N50E-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) e Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d VDS = 0 V to 80 % VDS Soldering Recommendations (Peak Temperature) c for 10 s VDS VGS ID IDM EAS PD TJ, Tstg dV/dt Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.4 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. e. Limited by maximum junction temperature. LIMIT 500 ± 30 26 16 50 0.2 273 35 -55 to +150 65 25 300 UNIT V A W/°C mJ W °C V/ns °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. - - MAX. 65 3.6 UNIT °C/W S15-0278-Rev. C, 23-Feb-15 1 Document Number: 91628 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page www.vishay.com SiHA25N50E Vishay Siliconix 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 Single Pulse 0.001 0.01 0.1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case 1 VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 13 - Switching Time Test Circuit VDS VDS tp VDD IAS Fig. 16 - Unclamped Inductive Waveforms VDS 90 % 10 V QGS QG QGD 10 % VGS td(on) tr td(off) tf Fig. 14 - Switching Time Waveforms VG Charge Fig. 17 - Basic Gate Charge Waveform VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T IAS 0.01 Ω + - VDD Fig. 15 - Unclamped Inductive Test Circuit Current regulator Same type as D.U.T. 12 V 50 kΩ 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-0278-Rev. C, 23-Feb-15 5 Document Number: 91628 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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