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Teilenummer | SiHFSL9N60A |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | Vishay | |
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Gesamt 9 Seiten IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
49
13
20
Single
I2PAK
(TO-262)
D
0.75
G
S
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
• This Device is only for Through Hole Application
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
I2PAK (TO-262)
SiHFSL9N60A-GE3
IRFSL9N60APbF
SiHFSL9N60A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
9.2
5.8
37
1.3
290
9.2
17
170
5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90362
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
15 V
VDS
tp
VDS
L
Driver
Rg
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD A
Fig. 12a - Unclamped Inductive Test Circuit
600
500
400
IAS
Fig. 12b - Unclamped Inductive Waveforms
TOP
BOTTOM
ID
4.1A
5.8A
9.2A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 90362
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | ||
Seiten | Gesamt 9 Seiten | |
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