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Teilenummer | D858 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | INCHANGE | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD858
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Good Linearity of hFE
·High Collector Power Dissipation
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
60 V
5V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
10 A
60 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D858 Schematic.PDF ] |
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