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PDF TGA2573 Data sheet ( Hoja de datos )
| Número de pieza | TGA2573 | |
| Descripción | 2-18 GHz 10 Watt GaN Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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TGA2573
2-18 GHz 10 Watt GaN Amplifier
Applications
• Military Radar
• Communications
• Electronic warfare
• Electronic counter measures
• Test Equipment
Product Features
• Frequency Range: 2 – 18 GHz
• Psat: 40.0 dBm at Vd=30 V
• PAE: 25% typical
• Small Signal Gain: 9 dB
• Return Loss: 15 dB
• Bias: Vd = 30 V, Idq = 500 mA,
Vg = -3.4 V typical
• Technology: 0.25 µm GaN on SiC
• Dimensions: 2.55 x 5.54 x 0.1 mm
General Description
TriQuint’s TGA2573 is a wideband, high power GaN
HEMT amplifier fabricated on TriQuint’s production
0.25um GaN on SiC process. Operating from 2 to 18
GHz, it achieves 40 dBm saturated output power, 25%
PAE and 9 dB small signal gain at a drain bias of 30
volts.
Fully matched to 50 ohms and with integrated DC
blocking caps on both RF ports, the TGA2573 is ideally
suited to support both commercial and defense related
applications.
The TGA2573 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Lead-free and RoHS compliant
Functional Block Diagram
Vg
4
RF
In 1
TGA2573
2
RF
3 Out
Vd
Bond Pad Configuration
Bond Pad #
1
2
3
4
Symbol
RF In
Vd
RF Out
Vg
Ordering Information
Part No.
TGA2573
ECCN
XI(c)
Description
GaN on SiC Die
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 1 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
1 page  
TGA2573
2-18 GHz 10 Watt GaN Amplifier
Typical Performance (cont.)
Vd = 25 V
Output Power vs. Freq. vs. Input Power
Vd = 25 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C
42
41 35dBm
40 34dBm
39 33dBm
38 32dBm
37 31dBm
36 30dBm
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
Vd = 30 V
Output Power vs. Freq. vs. Input Power
Vd = 30 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C
42
41 35dBm
40 34dBm
39 33dBm
38 32dBm
37 31dBm
36 30dBm
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
Vd = 35 V
Output Power vs. Freq. vs. Input Power
Vd = 35 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C
42
41 35dBm
40 34dBm
39 33dBm
38 32dBm
37 31dBm
36 30dBm
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
42
41
40
39
38
37
36
35
34
33
32
1
Output Power vs. Freq. vs. Temp.
Vd = 25 V, Id = 0.5 A, Vg = -3.4 V Typical
+35 dBm Pin, +25 deg C
+35 dBm Pin, +85 deg C
3 5 7 9 11 13 15 17
Frequency (GHz)
19
42
41
40
39
38
37
36
35
34
33
32
1
Output Power vs. Freq. vs. Temp.
Vd = 30 V, Id = 0.5 A, Vg = -3.4 V Typical
+35 dBm Pin, +25 deg C
+35 dBm Pin, +85 deg C
3 5 7 9 11 13 15 17
Frequency (GHz)
19
42
41
40
39
38
37
36
35
34
33
32
1
Output Power vs. Freq. vs. Temp.
Vd = 35 V, Id = 0.5 A, Vg = -3.4 V Typical
+35 dBm Pin, +25 deg C
+35 dBm Pin, +85 deg C
+33 dBm Pin, +25 deg C
+33 dBm Pin, +85 deg C
3 5 7 9 11 13 15 17
Frequency (GHz)
19
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 5 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
5 Page 
TGA2573
2-18 GHz 10 Watt GaN Amplifier
Application Circuit
Vg
10 µF 1/
4
1000 pF
RF 1
In
3 RF
Out
TGA2573
2
1000 pF
Vd
10 µF 1/
0.01 µF
Bias-up Procedure
Vg set to -6.0 V
Vd set to +30 V
Adjust Vg more positive until quiescent Id is 500 mA.
This will be ~ Vg = -3.4 V
Apply RF signal to RF Input
Bias-down Procedure
Turn off RF signal
Reduce Vg to -6.0 V. Ensure Id ~ 0 mA
Set Vd to 0 V
Set Vg to 0 V
1/ Additional bypass capacitors may be required at this location. The value of these capacitors varies by application. Variables
include power supply impedance, power supply stability with reactive loads, and the inductance from the power supply to this
assembly. One to 47 uF tantalum capacitors are commonly used here.
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 11 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet TGA2573.PDF ] | |
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