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PDF AG603-89G Data sheet ( Hoja de datos )
| Número de pieza | AG603-89G | |
| Descripción | InGaP HBT Gain Block | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• Mobile Infrastructure
• CATV / FTTX
• W-LAN / ISM
• WCDMA / LTE
AG603-89G
InGaP HBT Gain Block
AG603G
SOT-89 Package
Product Features
• DC – 3000 MHz
• +19.5 dBm P1dB at 900 MHz
• +33 dBm OIP3 at 900 MHz
• 18.5 dB Gain at 900 MHz
• Single Voltage Supply
• SOT-89 package
• Internally matched to 50 Ω
Functional Block Diagram
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / VCC
General Description
The AG603-89 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG603-89 typically provides
18.5 dB of gain, +33 dBm OIP3, and +19.5 dBm P1dB.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85 °C and is
housed in a lead-free/green/RoHS-compliant SOT-89
industry-standard SMT package.
The AG603-89 consists of Darlington pair amplifiers
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies such as GSM, CDMA, W-CDMA and LTE.
In addition, the AG603-89 will work for other applications
within the DC to 3 GHz frequency range such as CATV.
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF IN
GND
RF OUT / VCC
GND
Ordering Information
Part No.
Description
AG603-89G
InGaP/GaAs HBT Gain Block
AG603-89PCB
0.7-2.4 GHz Evaluation Board
Standard T/R size = 3000 pieces on a 13” reel
Datasheet: Rev A 9/5/13
© 2013 TriQuint
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
AG603-89G
InGaP HBT Gain Block
Typical Performance − AG603-89PCB
Test conditions unless otherwise noted: VSUPPLY =+6 V, R1 = 11.2 Ω, ICC = 75 mA (typ.), TCASE = +25°C
Parameter
Typical Value
Units
Frequency
100 500 900 1900 2140 2400 3500 5800 MHz
Gain
19.4 19.1 18.5 16.5 16.0 15.5 13.5
9.7
dB
Input Return Loss
18 16 18 24 21 22 17 14 dB
Output Return Loss
29 18 14 11 11 10
8
6 dB
Output P1dB
Output IP3(1)
+19.3
+33.7
+19.3
+33.6
+19.3
+33.2
+18.7
+33.0
+18.6
+33.0
+18.6
+32.8
+17.0
dBm
dBm
Noise Figure
3.8 3.8 3.9 4.1 4.1 4.2
dB
Notes:
1. OIP3 measured with two tones at an output power of +2 dBm / tone separated by 10 MHz.
2. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by
external components shown in the application circuit.
Performance Plots − AG603-89PCB
Test conditions unless otherwise noted:
Gain vs. Frequency
25
20
+85°C
+25°C
−40°C
15
10
5
VSUPPLY =+6 V, R1 = 11.2 Ω, ICC = 75 mA (typ.), TCASE = +25°C
Return Loss vs. Frequency
0
Temp.=+25°C
125
I-V Curve ICC vs. VCC
|S22|
-10
100
Optimal operating point (typ.)
75
-20
|S11|
50
-30
25
0 -40
0
01234
0 1 2 3 4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6
Frequency (GHz)
Frequency (GHz)
Device Voltage (V)
Output IP3 vs. Frequency
40
Pout=+2 dBm/tone
Δf= 10 MHz
35
+85°C
+25°C
−40°C
30
25
20
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
60
55
50
45
40
35
0
Output IP2 vs. Frequency
+85°C
+25°C
−40°C
200 400 600 800
Frequency (MHz)
1000
Noise Figure vs. Frequency
7
6
+85°C
+25°C
−40°C
5
4
3
2
1
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
P1dB vs. Frequency
25
+85°C
+25°C
20 −40°C
15
10
5
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Output Power / Gain vs. Input Power
20 24
Freq.=900 MHz
Temp.=+25°C
18
Gain
20
16 16
Output Power
14 12
12 8
10
-12
-8 -4 0
4
Input Power (dBm)
4
8
Output Power / Gain vs. Input Power
18 24
Freq.=2000 MHz
Temp.=+25°
16 20
Gain
14
16
12 12
Output Power
10 8
8
-12
-8 -4 0 4
Input Power (dBm)
4
8
Datasheet: Rev A 9/5/13
© 2013 TriQuint
- 5 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page | ||
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| PDF Descargar | [ Datasheet AG603-89G.PDF ] | |
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