Datenblatt-pdf.com


C5464 Schematic ( PDF Datasheet ) - Toshiba

Teilenummer C5464
Beschreibung NPN Transistor - 2SC5464
Hersteller Toshiba
Logo Toshiba Logo 




Gesamt 3 Seiten
C5464 Datasheet, Funktion
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5464
2SC5464
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
20
12
3
60
30
100
125
55 to 125
Unit
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
JEITA
TOSHIBA
2-2H1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 2.4 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 15 mA
VCE = 8 V, IC = 15 mA, f = 500 MHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 500 MHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
5 7 GHz
17.5
8 12
dB
1 dB
1.1
2
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 15 mA
Cob
Cre
VCB = 8 V, IE = 0, f = 1 MHz
(Note 2)
80
1
1
240
0.6
0.35
μA
μA
pF
pF
Note 1: hFE classification O: 80 to 160, Y: 160 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2010-05-14





SeitenGesamt 3 Seiten
PDF Download[ C5464 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
C5460NPN Transistor - 2SC5460Toshiba
Toshiba
C5460APD moduleHamamatsu Corporation
Hamamatsu Corporation
C5463NPN Transistor - 2SC5463Toshiba
Toshiba
C5464NPN Transistor - 2SC5464Toshiba
Toshiba
C5465NPN Transistor - 2SC5465Toshiba
Toshiba

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche