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Teilenummer | C5233 |
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Beschreibung | NPN Transistor - 2SC5233 | |
Hersteller | Toshiba | |
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Gesamt 5 Seiten TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5233
General Purpose Amplifier Applications
Switching and Muting Switch Application
2SC5233
Unit: mm
• Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
• Large collector current: IC = 500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 15 V
Collector-emitter voltage
VCEO 12 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 500 mA
Base current
IB 50 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
JEDEC
JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ C5233 Schematic.PDF ] |
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