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PDF C5684 Data sheet ( Hoja de datos )
| Número de pieza | C5684 | |
| Descripción | NPN Transistor - 2SC5684 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5684
Switching Regulator and High-Voltage Switching
Applications
2SC5684
Unit: mm
• Excellent switching times (IC = 0.3 A)
: tr = 0.7 µs (max), tf = 0.5 µs (max)
• High collector breakdown voltage: VCEO = 800 V
• High-speed DC-DC converter applications
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
900
800
7
0.8
1.5
0.4
1.8
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 720 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.08 A
IC = 0.3 A, IB = 0.06 A
IC = 0.3 A, IB = 0.06 A
Min Typ. Max Unit
― ― 100 µA
――
1 mA
900 ―
―
V
800 ―
―
V
10 ― ―
15 ― 60
― ― 1.0 V
― ― 1.2 V
Rise time
Switching time Storage time
Fall time
tr
20 µs Input IB1
Output
― ― 0.7
IB2
tstg ― ― 4.5 µs
VCC ≈ 360 V
tf IB1 = 0.06 A, IB2 = −0.12 A
Duty cycle ≤ 1%
― ― 0.5
1 2004-07-26
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C5684.PDF ] | |
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