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PDF C4666 Data sheet ( Hoja de datos )
| Número de pieza | C4666 | |
| Descripción | NPN Transistor - 2SC4666 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C4666 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SC4666
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4666
Audio Frequency Amplifier Applications
Switching Applications
• High hFE: hFE = 600~3600
• High voltage: VCEO = 50 V
• High collector current: IC = 150 mA (max)
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
50
5
150
30
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
SC-70
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2E1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
NF (1)
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
Rg = 10 kΩ
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ
Note: hFE classification A: 600~1800, B: 1200~3600
Marking
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
600 ⎯ 3600
⎯ 0.12 0.25 V
100 250 ⎯ MHz
⎯ 3.5 ⎯ pF
⎯ 0.5 ⎯
dB
⎯ 0.3 ⎯
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C4666.PDF ] | |
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