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Teilenummer | C3669 |
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Beschreibung | NPN Transistor - 2SC3669 | |
Hersteller | Toshiba | |
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Gesamt 5 Seiten TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications
Power Switching Applications
2SC3669
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1429
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
80
80
5
2
1
1000
150
−55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ C3669 Schematic.PDF ] |
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