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Número de pieza | NCE0110K | |
Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | NCE Power Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NCE0110K (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Pb Free Product
NCE0110K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0110K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =100V,ID =9.6A
RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0110K
NCE0110K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
9.6
6.5
58
30
0.2
150
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1
1 page http://www.ncepower.com
Pb Free Product
NCE0110K
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.1
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NCE0110K.PDF ] |
Número de pieza | Descripción | Fabricantes |
NCE0110AK | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE0110AS | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE0110K | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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