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PDF AM2306 Data sheet ( Hoja de datos )
| Número de pieza | AM2306 | |
| Descripción | -30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM2306 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
The AM2306 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
AM2306 is available in a SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2306E3R
E3
AM2306E3VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
FEATURES
-30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V
30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in a SOT-23 package.
APPLICATION
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
DC/DC Converter
P CHANNEL MOSFET
REV1.0
- MAR 2011 RELEASED –
N-Channel
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
TYPICAL CHARACTERISTICS
25°C Unless Specified
1. Output Characteristics
2. Transfer Characteristics
3. Drain Source On Resistance
4. Gate Threshold Voltage
5. Gate Charge
6. Drain Source On Resistance
REV1.0
- MAR 2011 RELEASED –
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM2306.PDF ] | |
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