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Teilenummer | 320N20N |
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Beschreibung | Power-Transistor | |
Hersteller | Infineon | |
Logo | ||
Gesamt 11 Seiten IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
200 V
32 mΩ
34 A
Type
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
Package
Marking
PG-TO263-3
320N20N
PG-TO220-3
320N20N
PG-TO262-3
320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=34 A, R GS=25 Ω
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
34
22
136
190
10
±20
136
-55 ... 175
55/175/56
Rev. 2.3
page 1
Unit
A
mJ
kV/µs
V
W
°C
2011-05-20
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=34 A; V GS=10 V
100
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
80
60
98%
40
typ
20
3.5
900 µA
3
90 µA
2.5
2
1.5
1
0.5
0
-60 -20 20 60 100 140 180
T j [°C]
0
-60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
102
25 °C
Coss
102
175 °C
25°C, 98%
101
101
Crss
175°C, 98%
100
0 40 80 120 160
0 0.5 1 1.5 2
V DS [V]
V SD [V]
Rev. 2.3
page 6
2011-05-20
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ 320N20N Schematic.PDF ] |
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