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PDF D895 Data sheet ( Hoja de datos )
| Número de pieza | D895 | |
| Descripción | NPN Transistor - 2SD895 | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D895 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number:679F
2SB775 : PNP Epitaxial Planar Silicon Transistor
2SD895 : NPN Triple Diffused Planar Silicon Transistor
2SB775/2SD895
85V/6A, AF 35W Output Applications
Features
· Wide ASO because of on-chip ballast resistance.
· Capable of being mounted easily becasuse of one-
point fixing type plastic molded package
(Interchangeable with TO-3).
· Large current capacity : IC=6A
· Highly resistance breakdown due to wide ASO.
Package Dimensions
unit:mm
2022A
[2SB775/2SD895]
( ) : 2SB775
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VBE
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
VCE=(–)5V, IC=(–)1A
IC=(–)4A, IB=(–)0.4A
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
(–)100
(–)85
(–)6
(–)6
(–)10
60
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
60*
20
(18)15
160
(–1.4)
0.9
max
(–)0.1
(–)0.1
200*
(–)1.5
(–2.0)
2.0
Unit
mA
mA
MHz
pF
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/1116MW, TS-3634/7039 No.679–1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet D895.PDF ] | |
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